AIXTRON Joins 300 mm GaN Power Electronics Program with Hyperion Tool

AIXTRON SE has announced its participation in a 300 mm GaN Power Electronics Program with its Hyperion GaN MOCVD System. The system will supply 300 mm epitaxial wafers for developing power electronics applications such as chargers for electric vehicles, solar inverters, and AI data center power systems.

Imec, a semiconductor research institute in Belgium, has expanded its GaN Power Program to include 300 mm wafer development for advanced GaN devices. The shift to larger substrates aims to lower manufacturing costs and improve device performance. AIXTRON's Hyperion system will operate in imec's cleanroom, aiding in the advancement of GaN technology.

AIXTRON CEO Dr. Felix Grawert emphasized the strategic partnership with imec, fostering the integration of 300 mm GaN epitaxy in Silicon cleanrooms. Both organizations have a history of collaboration in GaN technology development.